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2SD1111 - NPN TRANSISTOR

Key Features

  • High DC Current Gain (5000 or greater).
  • Large current capacity and wide ASO.
  • Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.0 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCE.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN751C NPN Epitaxial Planar Silicon Darlington Transistor 2SD1111 Driver Applications Applications · Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features · High DC Current Gain (5000 or greater). · Large current capacity and wide ASO. · Low saturation voltage (VCE(sat)=0.8V typ). Package Dimensions unit:mm 2003B [2SD1111] 5.0 4.0 4.0 0.45 0.5 0.45 0.44 0.6 2.0 14.0 5.