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2SD1667 - PNP/NPN Epitaxial Planar Silicon Transistors

Key Features

  • Low-saturation collector-to-emitter voltage : VCE(sat)=.
  • 0.4V max/IC=(.
  • )3A, IB=(.
  • )0.3A.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1134/2SD1667] ( ) : 2SB1134 1 : Base 2 : Collector 3 : Emitter Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:2091B PNP/NPN Epitaxial Planar Silicon Transistors 2SB1134/2SD1667 50V/5A Switching Applications Applications · Relay drivers, high-speed inverters, and other general high-current switching applications. Features · Low-saturation collector-to-emitter voltage : VCE(sat)=–0.4V max/IC=(–)3A, IB=(–)0.3A. · Micaless package facilitating mounting.