• Part: 2SD1668
  • Description: PNP/NPN Epitaxial Planar Silicon Transistors
  • Category: Transistor
  • Manufacturer: SANYO
  • Size: 102.01 KB
Download 2SD1668 Datasheet PDF
SANYO
2SD1668
Features - Low-saturation collector-to-emitter voltage : VCE(sat)=- 0.4V max. - Wide ASO leading to high resistance to breakdown. - Micaless package facilitating mounting. Package Dimensions unit:mm 2041A [2SB1135/2SD1668] ( ) : 2SB1135 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Symbol VCBO VCEO VEBO IC ICP PC Junction Temperature Storage Temperature Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions Parameter Symbol Conditions Collector Cutoff Current ICBO VCB=(- )40V, IE=0 Emitter Cutoff Current DC Current Gain IEBO h FE1 h FE2 VEB=(- )4V, IC=0 VCE=(- )2V, IC=(- )1A VCE=(- )2V, IC=(- )5A Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage f T VCE=(- )5V, IC=(- )1A VCE(sat) IC=(- )4A, IB=(- )0.4A - : The 2SB1135/2SD1668 are classified by 1A h FE as follows : 70 Q 140 100 R 200 140 S...