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2SD2600 - NPN Triple Diffused Planar Silicon Darlington Transistor

Key Features

  • High DC current gain. Large current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Tc=25°C Conditions Ratings 110 100 6 8 12 35 150 --55 to +150 Unit V V V A A W °C °C Electrical Characteristics at Ta=25°C Paramete.

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2SD2624 NPN Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : EN8564 2SD2600 SANYO Semiconductors DATA SHEET 2SD2600 Applications • NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features • • High DC current gain. Large current capacity and wide ASO.