Package Dimensions
unit : mm 2079D
[2SD2627]
10.0 3.2
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode. 4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.7
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse.
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN6478A
2SD2627LS
NPN Triple Diffused Planar Silicon Transistor
www.DataSheet4U.com
2SD2627LS
Color TV Horizontal Deflection Output Applications
Features
• • • • •
Package Dimensions
unit : mm 2079D
[2SD2627]
10.0 3.2
3.5 7.2
High speed. High breakdown voltage(VCBO=1500V). High reliability(Adoption of HVP process). Adoption of MBIT process. On-chip damper diode.
4.5
2.8
16.1
16.0
3.6
0.9
1.2
14.0
1.2
0.75 1 2 3
0.
2SD2627LS Datasheet
