2SD613 - PNP/NPN Epitaxial Planar Silicon Transistor

Datasheet Summary

Features

High breakdown voltage, VCEO85V, high current 6A.
AF25 to 35W output. Package Dimensions unit:mm 2010C [2SB633/2SD613] ( ) : 2SB633 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Tc=25˚C Conditions.

Sanyo Semicon Device

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Datasheet Details

Part number	2SD613
Manufacturer	Sanyo Semicon Device
File Size	39.97 KB
Description	PNP/NPN Epitaxial Planar Silicon Transistor
Datasheet	2SD613 Datasheet
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Full PDF Text Transcription

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Ordering number:513H PNP/NPN Epitaxial Planar Silicon Transistor 2SB633/2SD613 85V/6A, AF 25 to 35W Output Applications Features · High breakdown voltage, VCEO85V, high current 6A. · AF25 to 35W output.

Published: Mar 30, 2005 |