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Ordering number:EN5077
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive.
P-Channel Silicon MOSFET
2SJ421
Ultrahigh-Speed Switching Applications
Package Dimensions
unit:mm 2116
[2SJ421] 85
0.1 1.5 1.8max 4.4 0.3 6.0
1 5.0
4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
0.595 1.27 0.43
Conditions
PW≤10µs, duty cycle≤1% Mounted on ceramic board (1000mm2× 0.
2SJ421 Datasheet
