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Ordering number:ENN6120A
P-Channel Silicon MOSFET
2SJ560
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · 2.5V drive.
Package Dimensions
unit:mm 2157
[2SJ560]
4.5 1.6 1.5
0.4 3 1.5 2 3.0 0.75
0.5 1
1.0
4.25max
2.5
0.4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1%
1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view)
Conditions
Ratings –20 ±10 –1.5 –6 1.3 3.5 150 –55 to +150
Unit V V A A W W ˚C
˚C
Mounted on a ceramic board (250mm2× 0.