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2SJ563 - Ultrahigh-Speed Switching Applications

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive. Package Dimensions unit:mm 2062A [2SJ563] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : P.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number:ENN6097A P-Channel Silicon MOSFET 2SJ563 Ultrahigh-Speed Switching Applications Features · Low ON-resistance. · Ultrahigh-speed switching. · 4V drive. Package Dimensions unit:mm 2062A [2SJ563] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Conditions Ratings –30 ±20 –2 –8 1.5 3.5 150 –55 to +150 Unit V V A A W W ˚C ˚C Mounted on a ceramic board (250mm2× 0.