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2SJ580 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6669 2SJ580 P-Channel Silicon MOSFET 2SJ580 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2062A [2SJ580] 4.5 1.6 1.5 Low ON-resistanse. Ultrahigh-speed switching. 4V drive. 0.5 3 1.5 2 3.0 1 1.0 0.4 2.5 4.25max 0.4 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP (Bottom view) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.8mm) Tc=25°C Conditions Ratings Unit -60 ± 20 --1.8 --7.2 1.5 3.