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Ordering number:ENN6412
P-Channel Silicon MOSFET
2SJ585LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Ultrahigh-speed switching. · Micaless package facilitating mounting.
Package Dimensions
unit:mm 2078B
[2SJ585LS]
10.0
3.5 7.2
4.5
2.8
3.2
16.1
16.0
0.9 1.2
14.0
3.6
0.75 1 2 3
2.4
0.7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
PW≤10µs, duty cycle≤1% Tc=25°C
2.55
2.55
1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI-LS
Conditions
0.6
Ratings –250 ±30 –6.5 –26 2.
2SJ585LS Datasheet
