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2SJ667 - P-Channel MOSFET

Features

  • General-Purpose Switching Device.

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Ordering number : ENN8248 2SJ667 P-Channel Silicon MOSFET 2SJ667 Features • • • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) www.DataSheet4U.com Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV Conditions Ratings --100 ±20 --42 Unit V V A A W W °C °C mJ A PW≤10µs, duty cycle≤1% Tc=25°C --168 2.
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