The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Ordering number : ENN6671
2SJ609
P-Channel Silicon MOSFET
2SJ609
DC / DC Converter Applications
Features
• • •
Package Dimensions
unit : mm 2190
8.0 1.0
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
[2SJ609]
1.4
4.0 1.0 3.3
3.0
1.6 0.8
1.5
3.0
0.8 0.75
7.5
15.5
11.0
0.7
1
2
3
1 : Source 2 : Drain 3 : Gate
1.7
2.4
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Tc=25°C Conditions
4.