2SK1730
Features
- Low ON resistance.
- Ultrahigh-speed switching.
- Low-voltage drive.
- Meets radial taping.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Package Dimensions unit:mm
2087A
[2SK1730]
6.9 1.0
4.0 1.0
4.5 1.0
0.9 1
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electrical Characteristics at Ta = 25˚C
2.54 Conditions
Parameter
Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance
Static Drain-to-Source ON-State Resistance
Symbol
Conditions
V(BR)DSS IDSS IGSS
VGS(off) | yfs |
RDS(on) RDS(on)
ID=1m A, VGS=0 VDS=30V, VGS=0 VGS=±12V, VDS=0 VDS=10V, ID=1m A VDS=10V, ID=1A ID=1A, VGS=10V ID=1A, VGS=4V
0.6 0.5
1 : Source 2...
