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2SK1732 - N-Channel Silicon MOSFET

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive.
  • Its height onboard is 9.5mm.
  • Meets radial taping. Package Dimensions unit:mm 2085A [2SK1732] 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 1 2 3 0.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SK1730 N-Channel Silicon MOSFET
2SK1731 N-Channel Silicon MOSFET
2SK1733 N-Channel Silicon MOSFET
2SK1734 N-Channel Silicon MOSFET
2SK1735 N-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN3827 N-Channel Silicon MOSFET 2SK1732 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Its height onboard is 9.5mm. · Meets radial taping. Package Dimensions unit:mm 2085A [2SK1732] 10.5 1.9 4.5 1.2 2.6 1.4 1.2 7.5 1.0 8.5 1.6 0.5 1 2 3 0.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 2.5 2.5 1 : Source 2 : Drain 3 : Gate SANYO : FLP Ratings 30 ±15 4.5 18 1.