Datasheet4U Logo Datasheet4U.com

2SK2108 - N-Channel Silicon MOSFET

Key Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • Low-voltage drive.
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2108] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK2108 N-Channel Mosfet Transistor Inchange Semiconductor
2SK210 N-Channel MOSFET Toshiba Semiconductor
2SK2100-01MR Power MOSFET Fuji Electric
2SK2101-01MR N-channel MOS-FET Fuji Electric
2SK2103 Small switching Transistors Rohm

Other Datasheets by SANYO (now Panasonic)

Part Number Description
2SK212 N-Channel MOSFET
2SK2151 N-Channel Silicon MOSFET
2SK2152 N-Channel Silicon MOSFET
2SK2154 N-Channel Silicon MOSFET
2SK2160 N-Channel Silicon MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:ENN4602A N-Channel Silicon MOSFET 2SK2108 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. Package Dimensions unit:mm 2063A [2SK2108] 4.5 10.0 2.8 3.2 3.5 7.2 16.0 18.1 5.6 1.6 1.2 0.75 123 2.55 2.55 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Symbol VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg Conditions PW≤10µs, duty cycle≤1% Tc=25°C 2.55 2.55 2.4 14.0 2.4 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220ML Ratings 250 ±30 6 24 2.