2SK210 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type FM Tuner Applications VHF Band Amplifier Applications - - - High power gain: GPS = 24d B (typ.) (f = 100 MHz) Low noise figure: NF = 1.8d B (typ.) (f = 100 MHz) High forward transfer admittance: |Yfs| = 7 m S (typ.) (f = 1 k Hz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating - 18 10 100 125 - 55~125 Unit V m A m W °C °C Note: Using continuously under heavy loads (e.g. the application of high JEDEC ― temperature/current/voltage and the significant change in JEITA SC-59 temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. TOSHIBA 2-3F1C operating temperature/current/voltage, etc.) are within the Weight: 0.012 g (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). http://..net/ Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Power gain Noise figure Symbol IGSS V (BR) GDO IDSS (Note) VGS (OFF) ⎪Yfs⎪ Ciss Crss GPS NF Test Condition VGS = - 1.0 V, VDS = 0 V IG = - 100 μA VGS = 0 V, VDS = 10 V VDS = 10 V, ID = 1 μA VGS = 0 V, VDS = 10 V, f = 1 k Hz VDS = 10 V, VGS = 0, f = 1 MHz VGD = - 10 V, f = 1 MHz VDD = 10 V, f = 100 MHz (Figure 1) VDD = 10 V, f = 100 MHz (Figure 1) Min ⎯ - 18 3 - 1.2 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ - 3 7 3.5 ⎯ 24 1.8 Max - 10 ⎯ 24 ⎯ ⎯ ⎯ 0.65 ⎯ 3.5 Unit n A V m A V m S p F p F d B d B Note: IDSS classificatopn Y: 3.0~7.0 m A, GR (R): 6.0~14.0 m A, BL (L): 12.0~24.0 m...