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2SK2533 - Silicon N-Channel MOSFET

Key Features

  • Low ON-resistance.
  • High-speed diode.
  • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package.
  • High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs,.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN8611 2SK2533 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2533 General-Purpose Switching Device Applications Features • Low ON-resistance. • High-speed diode. • Enables simplified fabrication, high-density mounding, and miniaturization in end products due to the surface mountable package. • High-speed switching.