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B927 - 2SB927

Key Features

  • Adoption of FBET, MBIT processes.
  • Low saturation voltage.
  • Large current capacity and wide ASO. www. DataSheet4U. com 0.5 0.6 4.7 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Conditions 1.

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Full PDF Text Transcription for B927 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for B927. For precise diagrams, and layout, please refer to the original PDF.

Ordering number:ENN1029C PNP/NPN Epitaxial Planar Silicon Transistors 2SB927/2SD1247 Large-Current Driving Applications Applications · Power supplies, relay drivers, lamp...

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riving Applications Applications · Power supplies, relay drivers, lamp drivers, electrical equipment. Package Dimensions unit:mm 2006B [2SB927/2SD1247] 6.0 5.0 Features · Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO. www.DataSheet4U.com 0.5 0.6 4.7 6.0 14.0 3.0 8.5 0.5 0.5 1 2 3 ( ) : 2SB927 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj

More Datasheets from SANYO (now Panasonic)

Part Number Description
B926 2SB926