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CPH3317 - Ultrahigh-Speed Switching Applications

Key Features

  • Package Dimensions unit : mm 2152A [CPH3317] 0.2 0.05 1.6 2.8 2.9 0.4 3 0.6 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com Ordering number : ENN7121 CPH3317 P-Channel Silicon MOSFET CPH3317 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3317] 0.2 0.05 1.6 2.8 2.9 0.4 3 0.6 0.15 Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.2 Ratings --20 ±10 --1 --4 0.