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CPH3417 - N-Channel Silicon MOSFET

Datasheet Summary

Features

  • Package Dimensions unit : mm 2152A [CPH3417] 2.9 0.4 3 0.6 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.05 1.6 2.8 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty c.

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Datasheet Details

Part number CPH3417
Manufacturer Sanyo Semicon Device
File Size 30.91 KB
Description N-Channel Silicon MOSFET
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Full PDF Text Transcription

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Ordering number : ENN7124 CPH3417 N-Channel Silicon MOSFET CPH3417 Ultrahigh-Speed Switching Applications Features • • • Package Dimensions unit : mm 2152A [CPH3417] 2.9 0.4 3 0.6 Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. 0.05 1.6 2.8 1 1.9 2 0.6 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions Ratings 20 ±10 1.8 7.2 0.
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