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Ordering number:ENN6388
P-Channel Silicon MOSFET
CPH5603
Ultrahigh-Speed Switching Applications
Features
· Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting.
Package Dimensions
unit:mm 2168
[CPH5603]
2.9 5 4 3
0.6 0.2
0.15
1 0.95
2 0.4
0.6
1.6
2.8
0.05
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.4
1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5
0.2 0.7 0.9
Ratings –30 ±20 –1.0 –4.0 0.
CPH5603 Datasheet
