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Ordering number:ENN6441
N-Channel and P-Channel Silicon MOSFETs
CPH5605
Ultrahigh-Speed Switching Applications
Features
· The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON resistance and high-speed switching, thereby enabling high-density mounting. · 2.5V drive.
Package Dimensions
unit:mm 2168
[CPH5605]
2.9 5 4 3
0.6
1 0.95
2 0.4
0.6
1.6
2.8
0.05
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.4
1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5
0.2
0.7
0.
CPH5605 Datasheet
