CPH5810 Description
ENN8206 CPH5810 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications.
CPH5810 Key Features
- posite type with an P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS001) contained in one package f
- [MOSFET]
- Low ON-resistance
- Ultrahigh-speed switching
- 4V drive
- Short reverse recovery time
- Low forward voltage