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CPH5810 - P-Channel Silicon MOSFET

Key Features

  • Composite type with an P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS001) contained in one package facilitating high-density mounting.
  • [MOSFET].
  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 4V drive.
  • [SBD].
  • Short reverse recovery time.
  • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Dra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN8206 CPH5810 CPH5810 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an P-Channel Sillicon MOSFET (MCH3312) and a Schottky Barrier Diode (SBS001) contained in one package facilitating high-density mounting. • [MOSFET] • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. • [SBD] • Short reverse recovery time. • Low forward voltage.