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CPH5818 - P-Channel Silicon MOSFET

Key Features

  • Package Dimensions.
  • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3339) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 54.
  • Low ON-resistance.
  • Ultrahigh-speed switching. [SBD].
  • Short reverse recovery time.
  • Low forward voltage. 1 0.95 0.2 [CPH5818] 0.15 3 0.05 1.6 0.6 2.8 0.6 2 0.4 0.7 0.2 0.9 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
CPH5810 P-Channel Silicon MOSFET
CPH5811 DC / DC Converter Applications
CPH5813 DC / DC Converter Applications
CPH5815 DC / DC Converter Applications
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7447 CPH5818 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5818 DC / DC Converter Applications Features Package Dimensions • Composite type with a P-Channel Sillicon MOSFET unit : mm (MCH3339) and a Schottky Barrier Diode (SBS007M) 2171 contained in one package facilitating high-density mounting. 2.9 [MOSFET] 54 • Low ON-resistance. • Ultrahigh-speed switching. [SBD] • Short reverse recovery time. • Low forward voltage. 1 0.95 0.2 [CPH5818] 0.15 3 0.05 1.6 0.6 2.8 0.6 2 0.4 0.7 0.2 0.9 1 : Cathode 2 : Drain 3 : Gate 4 : Source 5 : Anode 0.