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CPH6203 - High-Current Switching Applications

Datasheet Summary

Features

  • Low ON resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Package Dimensions unit:mm 2151 [CPH6301] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg P.

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Datasheet Details

Part number CPH6203
Manufacturer Sanyo Semicon Device
File Size 217.22 KB
Description High-Current Switching Applications
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Full PDF Text Transcription

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Ordering number:EN5938 P-Channel MOS Silicon FET CPH6301 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. Package Dimensions unit:mm 2151 [CPH6301] 6 5 4 0.6 0 to 0.1 0.6 1.6 2.8 1 2 3 0.95 1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 0.7 0.9 0.2 Ratings –20 ±10 –3 –12 1.6 150 –55 to +150 0.2 2.9 0.15 Unit V V A A W ˚C ˚C Mounted on a ceramic board (900mm2×0.
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