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Ordering number : ENN6936
CPH6351
P-Channel Silicon MOSFET
CPH6351
Ultrahigh-Speed Switching Applications
Preliminary Features
• • •
Package Dimensions
unit : mm 2151A
[CPH6351]
0.2
Low ON-resistance. Ultrahigh-speed switching. 2.5V drive.
2.9
0.15
6
5
4
0.6
0.05
1.6 2.8
1
2
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.7 0.9
0.2
3 0.95
1 : Drain 2 : Drain 3 : Gate 4 : Source 5 : Drain 6 : Drain SANYO : CPH6
0.4
0.6
Ratings --20 ± 10 --3 --12 1.6 150 --55 to +150
Unit V V A A W °C °C
Mounted on a ceramic board (900mm2!0.
CPH6351 Datasheet
