CPH6621 Datasheet | SANYO

Features - - P-Channel Silicon MOSFET General-Purpose Switching Device Applications Low ON-resistance. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit Mounted on a ceramic board (900mm2✕0.8mm) Conditions Ratings --20 ±10 --1.5 --6.0 0.9 1.2 150 --55 to +150 Unit V V A A W W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss Conditions ID=--1m A, VGS=0V VDS=-20V, VGS=0V VGS=±8V, VDS=0V VDS=-10V, ID=--1m A VDS=-10V, ID=-0.8A ID=--0.8A, VGS=-4V ID=--0.4A, VGS=-2.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz Ratings min --20 --1 ±10 --0.4 1.38 2.3 180 240 290 40 25 235 340 --1.3 typ max Unit V µA µA V S mΩ mΩ p F p F p F Marking : WH Continued on next page. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of...