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DBG150G - Diffused Junction Silicon Diode

Features

  • Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=15A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals.

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Datasheet Details

Part number DBG150G
Manufacturer Sanyo Semicon Device
File Size 61.27 KB
Description Diffused Junction Silicon Diode
Datasheet download datasheet DBG150G Datasheet
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www.DataSheet4U.com Ordering number : ENA0700 DBG150G SANYO Semiconductors DATA SHEET DBG150G Features • • • • Diffused Junction Silicon Diode 15A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=15A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value Tc=124°C, with heatsink Ta=26°C, without heatsink 50Hz sine 1cycle peak value Conditions Ratings 600 15 3.6 200 150 --55 to +150 2.5 0.8(0.
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