Diffused Junction Silicon Diode
25A Single-Phase Bridge Rectifier
Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals.
Full PDF Text Transcription for DBG250G (Reference)
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DBG250G. For precise diagrams, and layout, please refer to the original PDF.
www.DataSheet4U.com Ordering number : ENA0701 DBG250G SANYO Semiconductors DATA SHEET DBG250G Features • • • • Diffused Junction Silicon Diode 25A Single-Phase Bridge Rec...
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es • • • • Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value Tc=113°C, with heatsink Ta=25°C, without heatsink 50Hz sine 1cycle peak value Conditions Ratings 600 25 3.6 300 150 --
DBG250G Datasheet
