Datasheet4U Logo Datasheet4U.com

DBG250G - Diffused Junction Silicon Diode

Features

  • Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals.

📥 Download Datasheet

Datasheet preview – DBG250G

Datasheet Details

Part number DBG250G
Manufacturer Sanyo Semicon Device
File Size 61.19 KB
Description Diffused Junction Silicon Diode
Datasheet download datasheet DBG250G Datasheet
Additional preview pages of the DBG250G datasheet.

📁 Similar Datasheet

Other Datasheets by Sanyo Semicon Device
  • DBG150G - Diffused Junction Silicon Diode

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Ordering number : ENA0701 DBG250G SANYO Semiconductors DATA SHEET DBG250G Features • • • • Diffused Junction Silicon Diode 25A Single-Phase Bridge Rectifier Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=600V. Average output current : IO=25A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Dilective Strength Voltage Tightening Torque Symbol VRM IO IFSM Tj Tstg Vdis TOR Terminals tc case, AC 1 minute ( ): recommended value Tc=113°C, with heatsink Ta=25°C, without heatsink 50Hz sine 1cycle peak value Conditions Ratings 600 25 3.6 300 150 --55 to +150 2.5 0.8(0.
Published: |