DS135A Datasheet | SANYO

Features - - - Diffused Junction Type Silicon Diode 1.0A Power Rectifier Plastic molded structure. Peak reverse voltage : VRM= -100 to -400V. Average output current : IO=1.0A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Ta=60°C 50Hz sine wave, 1cycle Conditions DS135AE --100 1.0 45 150 --40 to +150 DS135AD --200 DS135AC --400 Unit V A A °C °C Electrical Characteristics at Ta=25°C Parameter Forward Voltage Reverse Current Symbol VF IR Conditions IF=1.0A VR : At each VRM Ratings min typ max 1.0 --10 Unit V µA Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, munication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in...