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DS135A - Diffused Junction Type Silicon Diode

Key Features

  • Diffused Junction Type Silicon Diode 1.0A Power Rectifier Plastic molded structure. Peak reverse voltage : VRM= -100 to -400V. Average output current : IO=1.0A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Ta=60°C 50Hz sine wave, 1cycle Conditions DS135AE --100 1.0 45 150 --40 to +150 DS135AD --200 DS135AC --400 Un.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
DS135 1.0A Power Rectifier

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www.DataSheet4U.com Ordering number : ENA0150 DS135A SANYO Semiconductors DATA SHEET DS135A Features • • • Diffused Junction Type Silicon Diode 1.0A Power Rectifier Plastic molded structure. Peak reverse voltage : VRM= -100 to -400V. Average output current : IO=1.0A. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Peak Reverse Voltage Average Output Current Surge Forward Current Junction Temperature Storage Temperature Symbol VRM IO IFSM Tj Tstg Ta=60°C 50Hz sine wave, 1cycle Conditions DS135AE --100 1.0 45 150 --40 to +150 DS135AD --200 DS135AC --400 Unit V A A °C °C Electrical Characteristics at Ta=25°C Parameter Forward Voltage Reverse Current Symbol VF IR Conditions IF=1.0A VR : At each VRM Ratings min typ max 1.