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EC3H04B - High-Frequency Low-Noise Amplifier and OSC Applications

Features

  • Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.7dB typ (f=2GHz). High cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H04B] 0.15 2 0.05 1.0 0.65 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector.

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Datasheet Details

Part number EC3H04B
Manufacturer Sanyo Semicon Device
File Size 34.14 KB
Description High-Frequency Low-Noise Amplifier and OSC Applications
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Ordering number : ENN6577 EC3H04B NPN Epitaxial Planar Type Silicon Transistor EC3H04B High-Frequency Low-Noise Amplifier and OSC Applications Features • • • • Package Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.4 0.25 Low noise : NF=1.7dB typ (f=2GHz). High cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1006 size) and thin (0.5mm) leadless package. [EC3H04B] 0.15 2 0.05 1.0 0.65 3 0.5 0.25 0.05 0.05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector SANYO : E-CSP1006-3 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.
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