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EC3H04C - High-Frequency Low-Noise Amplifier and OSC Applications

Features

  • Package Dimensions unit : mm 2184 [EC3H04C] 0.5 0.3 0.05 0.6 Low noise : NF=1.7dB typ (f=2GHz). Hige cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1008 size) and thin (0.6mm) leadless package. 0.2 0.05 0.2 3 0.05 4 1.0 2 1 0.3 (Bottom View) 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-t.

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Datasheet Details

Part number EC3H04C
Manufacturer Sanyo Semicon Device
File Size 33.76 KB
Description High-Frequency Low-Noise Amplifier and OSC Applications
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Ordering number : ENN6580 EC3H04C NPN Epitaxial Planar Silicon Transistor EC3H04C High-Frequency Low-Noise Amplifier and OSC Applications Features • • • • Package Dimensions unit : mm 2184 [EC3H04C] 0.5 0.3 0.05 0.6 Low noise : NF=1.7dB typ (f=2GHz). Hige cut-off frequency : fT=8GHz typ (VCE=1V). Low operating voltage. Ultraminiature (1008 size) and thin (0.6mm) leadless package. 0.2 0.05 0.2 3 0.05 4 1.0 2 1 0.3 (Bottom View) 0.05 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions 0.8 0.
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