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Ordering number : ENA1418A
ECH8309
SANYO Semiconductors
DATA SHEET
ECH8309
Features
• •
P-Channel Silicon MOSFET
General-Purpose Switching Device Applications
1.8V drive. Halogen free compliance.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Conditions Ratings --12 ±10 --9.5 --40 1.