ECH8609
ECH8609 is Ultrahigh-Speed Switching Applications manufactured by SANYO.
Features
- Package Dimensions unit : mm 2206
[ECH8609]
- The ECH8609 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching, thereby enabling hugh-density mounting. 4V drive.
0.65 2.9
(Side view)
(Bottom view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1%
(Side view)
3 4 0.65
1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8
P-channel -30 ±20 --4 -40 Unit V V A A W W °C °C
(Top view)
Conditions
N-channel 30 ±20 6 40 1.3 1.5 150
Mounted on a ceramic board (900mm2✕0.8mm)1unit Mounted on a ceramic board...
