FP104
Features
- posite type with 2devices (PNP transistor and Shottky barrier diode) contained in one package, facilitating high-density mounting.
- The FP104 is formed with a chips, one being equivalent to the 2SA1729 and a chip being eqivalent to the SB05-05CP placed in one package.
Package Dimensions unit:mm 2088A
[FP104]
1:Base 2,4,6,7:mon (Collcector, Cathode) 3:Emitter 5:Anode SANYO:PCP4 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 50 55 500 5
- 55 to +125
- 55 to +125 V V m A A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic...
