Datasheet4U Logo Datasheet4U.com

FP106 - DC-DC Converter Applications

Key Features

  • Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting.
  • The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB1005C. Package Dimensions unit:mm 2088A [FP106] 1:Base 2:Common 3:Emitter 4:Common 5:Anode 6:Common 7:Common (Common:Collcector, Cathode) SANYO:PCP4 (Bottom view) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Volt.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FP100 HIGH PERFORMANCE PHEMT Filtronic Compound Semiconductors
FP1000 (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES ETC
FP1000A (FP1010 Series) SILICON SURGE SUPPRESSOR DIODES ETC
FP1005R High current power inductors EATON
FP1006 High current power inductors EATON

Other Datasheets by SANYO (now Panasonic)

Part Number Description
FP101 DC-DC Converter Applications
FP102 DC-DC Converter Applications
FP103 DC-DC Converter Applications
FP104 DC-DC Converter Applications
FP105 DC-DC Converter Applications

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN4552 FP106 TR:PNP Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features · Complex type with a PNP transistor and a Shottky barrier diode in one package, facilitating highdensity mounting. · The FP106 is composed of 2 chips, one being equivalent to the 2SA1898 and the other the SB1005C.