FP108
Features
- posite type with a PNP transistor and a Shottky barrier diode contained in one package, facilitating high-density mounting.
- The FP108 is formed with 2 chips, one being equivalent to the 2SB1121 and the other the SB01015CP, placed in one package.
Package Dimensions unit:mm 2088A
[FP108] 1:Base 2:mon 3:Emitter 4:mon 5:Anode 6:mon 7:mon (mon:Collcector, Cathode) SANYO:PCP4 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1cycle 15 17 1 8
- 55 to +125
- 55 to +125 V V A A ˚C ˚C VCBO VCEO VEBO IC I CP IB PC Tj Tstg Mounted on ceramic board...
