FP301
Features
- posite type with 2 devices (NPN transistor and Schottoky barrier diode) contained in one package, facilitating high-density mounting.
- The FP301 is formed with a chip being equivalent to the 2SD1621 and a chip being equivalent to the SB07-03C placed in one package.
Package Dimensions unit:mm 2099A
[FP301]
1:Base 2, 7:Collector 3:Emitter mon 4, 6:Collector 5:Base SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 30 35 700 5
- 55 to +125
- 55 to +125 V V m A A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Mounted on ceramic board (250mm2×0.8mm) 30 25...
