FP303
Features
- posite type with NPN transistor and Schottoky barrier diode facilitates high-density mounting.
- The FP303 is posed of chips equivalent to the 2SD1623 and SB05-05CP, which are placed in one package.
Package Dimensions unit:mm 2099A
[FP303]
1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector SANYO:PCP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Rectified Current Surge Forward Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle 50 55 500 5
- 55 to +125
- 55 to +125 V V m A A ˚C ˚C VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on ceramic board (250mm2×0.8mm) 60 50 6 2 4 400 0.8 150
- 55 to +150 V...
