FP401
Features
- Low ON resistance.
- Very high-speed switching.
- posite type with 2 low-voltage-drive N-channel MOSFETs facilitating high-density mounting. Electrical Connection
1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain (Top view) 1:Gate 2:Drain 3:Source 4:Drain 5:Gate 6:Drain 7:Drain SANYO:PCP5 (Bottom view)
Package Dimensions unit:mm 2102A
[FP401]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PD PT Tch Tstg
PW≤10µs, duty cycle ≤1% Tc=25˚C, 1 unit Mounted on ceramic board (250mm2×0.8mm) 1 unit Mounted on ceramic board (250mm2×0.8mm)
Conditions
Ratings 250 ±20 400 1.6 2.0 0.8 1.1 150
- 55 to +150
Unit V V m A A W W W
˚C ˚C
Electrical Characteristics at Ta=25˚C
Parameter D-S Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage...
