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FSS133 - P-Channel Silicon MOSFET

Key Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. FSS133 P-Channel Silicon MOSFET FSS133 Load Switching.

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FSS131 P-Channel Silicon MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN6919 Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. FSS133 P-Channel Silicon MOSFET FSS133 Load Switching Applications Package Dimensions unit : mm 2116 [FSS133] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Specifications Absolute Maximum Ratings at Ta=25°C 0.595 1.27 0.43 SANYO : SOP8 Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2!0.8mm) Ratings --20 ±10 --8 --52 1.