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Ordering number : EN8937
FSS294
SANYO Semiconductors
DATA SHEET
FSS294
Features
• • • • •
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
ON-resistance RDS(on)1=7.8mΩ(typ.) Input capacitance Ciss=2650pF(typ.) 4V drive Protection diode in Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm), PW≤10s Conditions Ratings 40 ±20 13 52 3.0 150 --55 to +150 Unit V V A A W °C °C
Package Dimensions
unit : mm (typ) 7005A-002
5.0 0.8 8 5 0.
FSS294 Datasheet
