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FTD2007 - N-Channel MOSFET

Datasheet Summary

Features

  • Low ON resistance.
  • 4V drive.
  • Mounting height 1.1mm.
  • Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2007] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tst.

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Datasheet Details

Part number FTD2007
Manufacturer Sanyo Semicon Device
File Size 34.12 KB
Description N-Channel MOSFET
Datasheet download datasheet FTD2007 Datasheet
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Full PDF Text Transcription

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Ordering number:ENN6430 N-Channel Silicon MOSFET FTD2007 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. Package Dimensions unit:mm 2155A [FTD2007] 0.65 8 0.95 3.0 5 0.425 4.5 6.4 1 0.25 4 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.1 1.0 0.5 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 Ratings 100 ±20 0.8 3.
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