FTS2012 Datasheet PDF - Sanyo Semicon Device Ultrahigh-Speed Switching Applications Specs

FTS2012 - Ultrahigh-Speed Switching Applications

Datasheet Summary

Features

Low ON resistance.
4V drive.
Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2012] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Sou.

Datasheet Details

Part number	FTS2012
Manufacturer	Sanyo Semicon Device
File Size	41.33 KB
Description	Ultrahigh-Speed Switching Applications
Datasheet	FTS2012 Datasheet
Additional preview pages of the FTS2012 datasheet.

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Full PDF Text Transcription

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Ordering number:ENN6360 N-Channel Silicon MOSFET FTS2012 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · 4V drive. · Mounting height 1.1mm. Package Dimensions unit:mm 2147A [FTS2012] 0.65 8 5 0.5 0.95 3.0 0.425 1 4 0.25 (0.95) Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% 1 : Drain 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Source 0.125 7 : Source 8 : Drain SANYO : TSSOP8 4.5 Conditions 6.4 Ratings 30 ±20 8 32 1.3 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (1000mm2×0.

Published: Mar 23, 2005 |