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Ordering number : EN9084A
2SJ629
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SANYO Semiconductors
DATA SHEET
P-Channel Silicon MOSFET
2SJ629
Features
• • •
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 1.8V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (600mm2!0.8mm) Tc=25°C Conditions Ratings --12 ±8 --4.5 --18 1.3 3.
J629 Datasheet
