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K1413 - 2SK1413

Key Features

  • Low ON resistance, low input capacitance, Ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SK1413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 2.0 1 2 3 3.5 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Te.

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📁 Similar Datasheet

Part Number Description Manufacturer
K1412 2SK1412 Sanyo
K1414 2SK1414 Sanyo
K1416 2SK1416 Sanyo
K1417 2SK1417 Sanyo
K1418 2SK1418 Sanyo

Other Datasheets by SANYO (now Panasonic)

Part Number Description
K1419 2SK1419
K142 Very High-Speed Switching Applications
K1420 2SK1420
K1444 2SK1444
K1445 2SK1445

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number:EN4229 N-Channel Silicon MOSFET 2SK1413 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2076B [2SK1413] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 4.0 2.8 2.0 20.4 1.0 2.0 0.6 2.0 1 2 3 3.5 5.45 5.45 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg 1 : Gate 2 : Drain 3 : Source SANYO : TO-3PML Conditions Ratings 1500 ±20 2 4 3.0 60 150 –55 to +150 Unit V V A A W W www.DataSheet.co.