Datasheet4U Logo Datasheet4U.com

K1412 - 2SK1412

Key Features

  • Low ON resistance, low input capacitance, Ultrahigh-speed switching.
  • High reliability (Adoption of HVP process).
  • Micaless package facilitating mounting. Package Dimensions unit:mm 2078B 10.0 3.2 [2SK1412] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
K1413 2SK1413 Sanyo Semicon Device
K1419 2SK1419 Sanyo Semicon Device
K140 Silicon bilateral voltage triggered switch Ceramate
K1400A 5V Crystal Clock Oscillators Champion
K1400G Sidac JIEJIE

Other Datasheets by SANYO (now Panasonic)

Part Number Description
K1414 2SK1414
K1416 2SK1416
K1417 2SK1417
K1418 2SK1418
K1421 2SK1421

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Ordering number:EN4228 N-Channel Silicon MOSFET 2SK1412 Ultrahigh-Speed Switching Applications Features · Low ON resistance, low input capacitance, Ultrahigh-speed switching. · High reliability (Adoption of HVP process). · Micaless package facilitating mounting. Package Dimensions unit:mm 2078B 10.0 3.2 [2SK1412] 4.5 2.8 3.5 7.2 16.0 0.6 16.1 3.6 0.9 1.2 0.75 1 23 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Channel Temperature Storage Temperature Tch Tstg 2.55 Conditions PW≤10µs, duty cycle≤1% Tc=25°C Electrical Characteristics at Ta = 25˚C 2.