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LE28CV1001T - 1MEG (131072 words x 8 bits) Flash Memory

Key Features

  • Highly reliable 2-layer polysilicon CMOS flash EEPROM process.
  • Read and write operations using a 5 V single-voltage power supply.
  • Fast access time: 120 and 150 ns.
  • Low power dissipation.
  • Operating current (read): 12 mA (maximum).
  • Standby current: 15 µA (maximum).
  • Highly reliable read/write.
  • Erase/write cycles: 104/103 cycles.
  • Data retention time: 10 years.
  • Address and data latches.
  • Fast page rewrite.

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Other Datasheets by SANYO (now Panasonic)

Part Number Description
LE28CV1001T-12 1MEG (131072 words x 8 bits) Flash Memory
LE28CV1001T-15 1MEG (131072 words x 8 bits) Flash Memory
LE28CV1001M 1MEG (131072 words x 8 bits) Flash Memory
LE28C1001M 1MEG (131072 words x 8 bits) Flash Memory
LE28C1001T 1MEG (131072 words x 8 bits) Flash Memory

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : EN*5409 CMOS LSI LE28CV1001M, T-12/15 1MEG (131072 words × 8 bits) Flash Memory Overview The LE28CV1001M, T Series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power, and ease of use. A 128-byte page rewrite function provides rapid data rewriting.