Description
The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYO's proprietary, high performance FlashTechnology.
Features
- 1
Sp ec ifi ca tio ns.
- Single 3.0-Volt Read and Write Operations.
- Separate Memory Banks by Address Space.
- Bank1: 4Mbit (256K x 16 / 512K x 8) Flash.
- Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash.
- Simultaneous Read and Write Capability
Read Access Time.
- 80 ns Latched Address and Data End of Write Detection.
- Toggle Bit / Data # Polling / RY/BY#.
LE28DW1621T Datasheet
