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LE28DW1621T - 16 Megabit FlashBank Memory

General Description

The LE28DW1621T consists of two memory banks, Bank1 is a 256K x 16 bits or 512K x 8 sector mode flash EEPROM and Bank2 is a 768K x 16 bits or 1536K x 8 sector mode flash EEPROM, manufactured with SANYO's proprietary, high performance FlashTechnology.

Key Features

  • 1 Sp ec ifi ca tio ns.
  • Single 3.0-Volt Read and Write Operations.
  • Separate Memory Banks by Address Space.
  • Bank1: 4Mbit (256K x 16 / 512K x 8) Flash.
  • Bank2: 12Mbit (768K x 16 / 1536K x 8) Flash.
  • Simultaneous Read and Write Capability Read Access Time.
  • 80 ns Latched Address and Data End of Write Detection.
  • Toggle Bit / Data # Polling / RY/BY#.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
16 Megabit FlashBank Memory LE28DW1621T-80T (Draft3) FEATURES: 1 Sp ec ifi ca tio ns • • • • • • • • • • Single 3.